1998. 10. 31 1/3 semiconductor technical data KTC2800 epitaxial planar npn transistor revision no : 1 high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to kta1700. maximum rating (ta=25 1 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5 v collector current i c 1.5 a base current i b 1.0 a collector power dissipation ta=25 1 p c 1.5 w tc=25 1 10 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =160v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 160 - - v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5.0 - - v dc current gain h fe (note) v ce =5v, i c =100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.5 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =10v, i c =100ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 25 - pf note: h fe classification o:70 140 , y:120 240
1998. 10. 31 2/3 KTC2800 revision no : 1 pc - ta ambient temperature ta ( c) 0 20 40 c 0 collector power dissipaztion p (w) 20 f - i tc c collector current i (ma) 5 300 t 0 transition frequency f (mhz) 30 10 30 100 300 1k 50 100 common emitter v =10v tc=25 c ce 60 80 100 120 140 160 180 5 10 25 15 30 tc=ta no heat sink 1 2 1 2 infinite heat sink i - v c ce ce collector-emitter voltage v (v) 0246 0.2 c 0 collector current i (a) v - i ce(sat) c c collector current i (a) 13 0.003 1 ce(sat) collector-emitter saturation 10 dc current gain h fe 300 0.003 3 1 collector current i (a) c c fe h - i 0.2 collector current i (a) 0 c 0.2 0 base-emitter voltage v (v) be be c i - v 810121416 0.4 0.6 0.8 1.0 common emitter tc=25 c i =2ma b 4ma 6ma 8ma 12ma 20ma 0ma 0.01 0.03 0.1 0.3 30 50 100 common emitter v =5v ce tc=100 c tc=25 c tc=-25 c voltage v (v) 0.01 0.03 0.1 0.3 0.03 0.05 0.1 0.3 0.5 common emitter i /i =10 c b t c = 100 c tc=25 c tc=-25 c 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 common v =5v ce emitter tc=1 00 c tc= 25 c t c=-25 c
1998. 10. 31 3/3 KTC2800 revision no : 1 collector current i (a) 3 c 0.02 30 10 5 collector-emitter voltage v (v) ce safe operating area 50 100 300 0.05 0.1 0.3 0.5 1 5 single nonre- petitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c c i max (continuous) dc s/b l i m it e d 1m s 10m s 100ms 1.5
|
